rf power transistor silicon npn power transistor 2N5070 note : ab o v e pa r ameters , r atings , limits and conditions are subject to change sep . 1998 cha r a c te r is tic s t c = 25 o c sym b o l t est c o ndi t ion s m i n i m u m t ypi c a l m a x i m u m uni t s bv ceo i c 0 3 a m 0 0 2 = v bv cer i c = 200 m a r be = 5.0 4 0 v i ceo v ce = 30 v 5.0 m a i cev v ce = 60 v v be = -1.5 v v ce = 60 v v be = -1.5 v t c = 150 o c 1 0 1 0 m a i cbo v cb = 60 v 1 0 m a i ebo v eb = 4.0 v 1 0 m a h fe v ce = 5.0 v i c = 1.0 a i c = 3.0 a 1 0 1 0 100 100 --- c ob v cb 5 8 z h m 0 . 1 = f v 0 3 = p f f t v ce = 15 v i c = 1.0 a f = 50 mhz 100 m hz p in im d v ce = 28 v p ou t = 25 w ( pep) z g = 50 f 1 = 30 m h z f 2 = 30. 001 mhz 4 0 1.25 - 3 0 w % d b npn silicon rf power transistor descrip tion: t he 2 n 5070 i s des i g ned f o r hig h p o w e r linear a m plif ier a pplic a t ion in t h e 2 . 0 t o 75 m h z rang e . f e a tures include : e m i tte r b a lla s t e d common e m i tte r pack a g e m a x i mum r a t i n g s i c 3 . 3 a 10 a ( peak) v c e 30 v p diss 70 w @ t c = 25 o c t s t g - 65 o c t o + 200 o c j c 2 . 5 o c / w p a cka ge sty le to- 6 0 1 = e m itter 2 = base 3 = colle ctor c ase = e m i tte r
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